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Method of forming an ultra-thin HfSiO metal silicate film for high performance CMOS applications and semiconductor structure formed in said method
Method of forming an ultra-thin HfSiO metal silicate film for high performance CMOS applications and semiconductor structure formed in said method
A semiconductor structure and method of forming the same, comprising forming a uniform buffer layer of diffusion-controlling stable material on top of a base gate dielectric layer, and then forming a uniform layer which contains a source of transitional metal atoms, and then annealing the structure to diffuse the transitional metal atoms from their source through the diffusion-controlling material and into the base gate dielectric layer.
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