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Formation of transistor having a strained channel region including a performance enhancing material composition utilizing a mask pattern
Formation of transistor having a strained channel region including a performance enhancing material composition utilizing a mask pattern
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机译:利用掩模图案形成具有应变沟道区的晶体管,该应变沟道区包括性能增强材料成分
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摘要
By forming a semiconductor alloy in a silicon-based active semiconductor region prior to the gate patterning, material characteristics of the semiconductor alloy itself may also be exploited in addition to the strain-inducing effect thereof. Consequently, device performance of advanced field effect transistors may be even further enhanced compared to conventional approaches using a strained semiconductor alloy in the drain and source regions.
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