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Process for making stacks of islands made of one semiconducting material encapsulated in another semiconducting material
Process for making stacks of islands made of one semiconducting material encapsulated in another semiconducting material
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机译:制造由一种封装在另一种半导体材料中的半导体材料制成的岛堆的方法
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摘要
The invention relates to the production of a stacked structure of planes of islands of a first semiconducting material encapsulated in a second semiconducting material on a substrate, comprising alternate deposition of planes of islands of a first semiconducting material and encapsulation layers of a second semiconducting material, the planes of islands of the first semiconducting material being made at an optimum growth temperature and at an optimum precursor gas partial pressure to result in a stacked structure for which the optical properties enable production of optoelectronic components to optically interconnect integrated circuits. The stacked structure is made on a plane of islands of a third semiconducting material called the sacrificial plane encapsulated in a fourth semiconducting material, the islands of the sacrificial plane being made under growth conditions that can result in high densities of small islands, in other words at a temperature below the optimum growth temperature and/or at a precursor gas partial pressure greater than the optimum partial pressure.
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