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Film thickness and composition measurement via auger electron spectroscopy and electron probe microanalysis
Film thickness and composition measurement via auger electron spectroscopy and electron probe microanalysis
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机译:通过俄歇电子能谱和电子探针显微分析测量膜厚和成分
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摘要
In some embodiments, techniques are described for combining an X-ray detector (e.g., for providing EPMA) and an electron detector (e.g., for providing AES) to provide a tool for determining film compositions and thicknesses on a specimen, such as a semiconductor structure or wafer. In one embodiment, a system includes a beam generator configurable to direct a beam towards a specimen. The electron beam may generate Auger electrons and X-rays. The system may also include at least one electron detector disposed adjacent to (e.g., above) the specimen to detect electrons and measure their energies emanating from a top layer of the specimen. One or more X-ray detectors may be disposed adjacent to the specimen to detect X-rays.
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