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Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer
Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer
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机译:半导体异质结构,包括基本弛豫的低缺陷密度SiGe层
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摘要
A heterostructure is provided which includes a substantially relaxed SiGe layer present atop an insulating region that is located on a substrate. The substantially relaxed SiGe layer has a thickness of from about 2000 nm or less, a measured lattice relaxation of from about 50 to about 80% and a defect density of less than about 108 defects/cm2. A strained epitaxial Si layer is located atop the substantially relaxed SiGe layer and at least one alternating stack including a bottom relaxed SiGe layer and an top strained Si layer located on the strained epitaxial Si layer.
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机译:提供了一种异质结构,该异质结构包括基本松弛的SiGe层,该SiGe层存在于位于衬底上的绝缘区域之上。基本上松弛的SiGe层的厚度为约2000nm或更小,测得的晶格弛豫为约50至约80%,并且缺陷密度小于约10 8 Sups / cm 2 Sup>。应变外延Si层位于基本上松弛的SiGe层和至少一个交替堆叠的顶部,该交替堆叠包括底部松弛SiGe层和位于应变外延Si层上的顶部应变Si层。
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