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Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer

机译:应变松弛SiGe / Si异质结构的等离子体氢化用于层转移

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摘要

The use of plasma hydrogenation for relaxed SiGe layer transfer is demonstrated. It is found that the interface of a strain-relaxed SiGe/Si heterostructure is effective in trapping H during plasma hydrogenation. Long microcracks observed at the interface due to the trapping of indiffused H indicate the distinct possibility of transferring the overlayer using the ion-cutting technique. Our results suggest that interfacial defects induced by the He implantation relaxation process trap the indiffusing H atoms and lead to interfacial cracks during hydrogenation or upon postannealing at higher temperatures. It is further noted that trapping of H at the interface is possible only in strain-relaxed structures. Without strain relaxation, H atoms introduced by plasma hydrogenation get trapped just below the sample surface and form a band of shallow platelets. Without the need for high-dose high-energy ion implantation, our results suggest an effective way for high-quality strain-relaxed SiGe layer transfer. The technique has potential for application in the fabrication of SiGe-on-insulator strained Si epitaxial layer and related structures. (C) 2004 American Institute Of Physics.
机译:证明了使用等离子体氢化进行松弛的SiGe层转移。已经发现,在等离子体氢化期间,应变松弛的SiGe / Si异质结构的界面在捕集H方面有效。由于捕获了扩散的H,在界面处观察到长微裂纹,这表明使用离子切割技术转移覆盖层的可能性很明显。我们的结果表明,由He注入弛豫过程引起的界面缺陷会捕获扩散的H原子,并在氢化过程中或在较高温度下进行后退火时导致界面裂纹。还应注意的是,仅在应变松弛结构中才可能在界面处捕获H。如果没有应变松弛,则通过等离子体氢化引入的H原子将被捕集在样品表面的正下方,并形成一条浅层的血小板。不需要大剂量高能离子注入,我们的结果表明了一种高质量的应变松弛SiGe层转移的有效方法。该技术在绝缘体上的SiGe应变Si外延层和相关结构的制造中具有应用潜力。 (C)2004年美国物理研究所。

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