Enhanced multi-bit non-volatile memory device with resonant tunnel barrier

摘要

A non-volatile memory cell uses a resonant tunnel barrier that has an amorphous silicon and/or amorphous germanium layer between two layers of either HfSiON or LaAlO₃. A charge trapping layer is formed over the tunnel barrier. A high-k charge blocking layer is formed over the charge trapping layer. A control gate is formed over the charge blocking layer. Another embodiment forms a floating gate over the tunnel barrier that is comprised of two oxide layers with an amorphous layer of silicon and/or germanium between the oxide layers.