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Methods of multi-step electrochemical mechanical planarization of Cu
Methods of multi-step electrochemical mechanical planarization of Cu
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机译:铜的多步电化学机械平面化方法
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摘要
A method is provided for removing conductive material from a metal layer deposited on a wafer having die level thickness variations on its surface. The method includes contacting the metal layer with a composition capable of planarizing die level thickness variations while using a current having a current density within a range of between about 5 mA/cm2 and about 40 mA/cm2, applying a first current to the wafer having a current density within a range of between about 5 mA/cm2 and about 20 mA/cm2 to remove a first portion of the metal layer to thereby planarize the wafer surface, and administering a second current to the wafer having a current density within a range of between about 20 mA/cm2 and about 40 mA/cm2 to remove a second portion of the metal layer and to leave a third portion of the metal layer on the wafer having a predetermined thickness.
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机译:提供了一种用于从沉积在其表面上具有裸片级厚度变化的晶片上的金属层中去除导电材料的方法。该方法包括使金属层与能够平坦化芯片级厚度变化的组合物接触,同时使用电流密度在大约5 mA / cm 2 Sup>至大约40 mA / cm < Sup> 2 Sup>,将第一电流施加到晶片上,该晶片的电流密度在大约5 mA / cm 2 Sup>和大约20 mA / cm 2 Sup之间>以去除金属层的第一部分从而使晶片表面平坦,并向晶片施加第二电流,该第二电流的电流密度在大约20 mA / cm 2 Sup>至大约40之间mA / cm 2 Sup>去除金属层的第二部分,并在晶片上保留预定厚度的金属层的第三部分。
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