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Integrated circuit memory devices having magnetic memory cells therein that utilize dual-ferromagnetic data layers
Integrated circuit memory devices having magnetic memory cells therein that utilize dual-ferromagnetic data layers
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机译:其中具有利用双铁磁数据层的磁存储单元的集成电路存储器件
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摘要
An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic insulating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic insulating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.
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