首页>
外国专利>
Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer
Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer
展开▼
机译:具有蚀刻停止层的绝缘体上硅(SOI)晶片的制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Embodiments of a silicon-on-insulator (SOI) wafer having an etch stop layer overlying the buried oxide layer, as well as embodiments of a method of making the same, are disclosed. The etch stop layer may comprise silicon nitride, nitrogen-doped silicon dioxide, or silicon oxynitride, as well as some combination of these materials. Other embodiments are described and claimed.
展开▼