Silicon micro-cantilever chemical sensors fabricated in double-layer silicon-on-insulator (SOI) wafer

摘要

Micro-cantilever piezoresistive sensors are optimally designed and fabricated in a double-layer silicon-on-insulator (SOI) wafer. The sensor geometry is optimized by placing the sensing piezoresistor at the cantilever root region to increase effective piezoreisistive sensing area. According to finite-element simulation results, high sensitivity can be obtained by design the cantilever into a wide and short shape. In order to use single-crystalling silicon to fabricate both the cantilever and the piezoresistor for high sensitivity, double-layer SOI wafer, which has two active layers and two insulating layers, is proposed to fabricate the self-sensing micro-cantilever sensor. The piezoresistor is made of the top active-layer single-crystalline silicon. Without p-n junction isolation, such a piezoresistor can be free from leakage-current relative noise that helps to achieve fine sensing resolution. The bottom active-layer is used to form the cantilever, with well controlled cantilever thickness and high fabrication yield. With the top surface of the micro-cantilever is modified with the functionalized self-assembled monolayer, detection of trace-concentration Trinitrotoluene (TNT) vapor is experimentally carried out, with reproducible sensing response to 7.6 ppb TNT.