A HETERO-INTERFACE FIELD EFFECT TRANSISTOR AND A METHOD FOR FABRICATING A HETERO-INTERFACE FIELD EFFECT TRANSISTOR

摘要

The present invention is directed to high frequency, high power or low noise devices such as low noise amplifiers, amplifiers operating of at frequencies in the range of 1 GHz up to 400 GHz, radars, portable phones, satellite broadcasting or communication systems, or other devices and systems that use high electron mobility transistors, also called hetero-structure field-effect transistors. A high electron mobility transistor (60 and 80) includes a substrate (61), a quantum well structure (62) and electrodes (72 and 74). The high electron mobility transistor has a polarization- induced charge of high density. Preferably the quantum well structure (62) includes an AIN buffe~ layer (64), an un-doped GaN layer (66), and an un-doped lnAIN layer (68).