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MICROELECTRONIC OPTICAL POWER METER BASED ON TRANSISTOR PHOTOSENSITIVE STRUCTURE
MICROELECTRONIC OPTICAL POWER METER BASED ON TRANSISTOR PHOTOSENSITIVE STRUCTURE
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机译:基于晶体管光敏结构的微电子光功率计
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摘要
A microelectronic sensor of optical radiation based on transistor photosensitive structure comprises a first source of constant voltage, MIS phototransistor, capacitor, resistor, and a global bus. A bipolar transistor, a passive inductance and a second source of constant voltage are brought in the said sensor. MIS phototransistor is made with a transparent gate electrode made of aurum, which is radiation-sensitive. A surface of a support is free from dielectric, radiation-sensitive and has slots above channels aria.
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