An optically controlled SiC lateral power transistor based on SiC/SiCGesuperjunction structure

摘要

An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been pro-posed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively.