首页>
外国专利>
Zn1-xMgxSySe1-y pin photodiode and avalanche photodiode on P-GaAs substrate
Zn1-xMgxSySe1-y pin photodiode and avalanche photodiode on P-GaAs substrate
展开▼
机译:P-GaAs衬底上的Zn1-xMgxSySe1-y pin光电二极管和雪崩光电二极管
展开▼
页面导航
摘要
著录项
相似文献
摘要
A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained.;A blue-ultraviolet on-p-GaAs substrate avalanche Zn1-xMgxSySe1-y photodiode with high sensitivity, high quantum efficiency, a wide sensitivity range, high reliability and a long lifetime. The ZnMgSSe avalanche photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, a lower doped n--Zn1- xMgxSySe1-y layer, a higher doped n+-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Since the incidence light is not absorbed by ZnTe layers, a high avalanche gain, high quantum efficiency and high sensitivity are obtained.
展开▼
机译:蓝紫外p-GaAs衬底引脚Zn 1-x Sub> Mg x Sub> S y Sub> Se 1-y Sub >量子效率高,暗电流小,可靠性高,使用寿命长的光电二极管。 ZnMgSSe光电二极管具有金属p电极,p-GaAs单晶衬底,p-(ZnSe / ZnTe) m Sup>超晶格(m:薄膜的整数组),可选地形成p-ZnSe缓冲层,p-Zn 1-x Sub> Mg x Sub> S y Sub> Se 1-y Sub>层i-Zn 1-x Sub> Mg x Sub> S y Sub> Se 1-y Sub>层,n-Zn 1-x Sub> Mg x Sub> S y Sub> Se 1-y Sub>层,n电极和可选提供的减反射电影。入射光到达i层时不通过ZnTe层。由于入射光不会被ZnTe层吸收,因此获得了高量子效率和高灵敏度。;蓝紫外on-p-GaAs衬底雪崩Zn1-xMgxSySe1-y光电二极管具有高灵敏度,高量子效率,宽灵敏度范围,可靠性高,使用寿命长。 ZnMgSSe雪崩光电二极管具有金属p电极,p-GaAs单晶衬底,p-(ZnSe / ZnTe)m超晶格(m:薄膜的整数组),可选形成的p-ZnSe缓冲层, p-Zn1-xMgxSySe1-y层,较低掺杂的n-Zn1-xMgxSySe1-y层,较高掺杂的n + -Zn1-xMgxSySe1-y层,n电极和可选提供的减反射膜。由于入射光不被ZnTe层吸收,因此可获得高雪崩增益,高量子效率和高灵敏度。
展开▼