METHOD OF FORMING AN INVERTED T SHAPED CHANNEL STRUCTURE FOR AN INVERTED T CHANNEL FIELD EFFECT TRANSISTOR DEVICE

摘要

A method of forming an inverted T shaped channel structure having a vertical channel portion (314) and a horizontal channel portion (322) for an Inverted T channel Field Effect Transistor ITFET device comprises providing a semiconductor substrate (302), providing a first layer (304) of a first semiconductor material over the semiconductor substrate (302), and providing a second layer (306) of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material. The method further comprises removing a portion of the first layer (304) and a portion of the second layer (306) selectively according to the different rates of removal so as to provide a lateral layer (312) and the vertical channel portion (314) of the inverted T shaped channel structure and removing a portion of the lateral layer (312) so as to provide the horizontal channel portion (322) of the inverted T shaped channel structure.