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METHOD OF FORMING AN INVERTED T SHAPED CHANNEL STRUCTURE FOR AN INVERTED T CHANNEL FIELD EFFECT TRANSISTOR DEVICE
METHOD OF FORMING AN INVERTED T SHAPED CHANNEL STRUCTURE FOR AN INVERTED T CHANNEL FIELD EFFECT TRANSISTOR DEVICE
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机译:倒T形场效应晶体管器件的倒T形通道结构的形成方法
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摘要
A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises semiconductor substrate, a first layer of a first semiconductor material over the semiconductor substrate and a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material.
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