首页>
外国专利>
Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device
Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device
展开▼
机译:用于倒T沟道场效应晶体管器件的形成倒T形沟道结构的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises providing a semiconductor substrate, providing a first layer of a first semiconductor material over the semiconductor substrate, and providing a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material. The method further comprises removing a portion of the first layer and a portion of the second layer selectively according to the different rates of removal so as to provide a lateral layer and the vertical channel portion of the inverted T shaped channel structure and removing a portion of the lateral layer so as to provide the horizontal channel portion of the inverted T shaped channel structure.
展开▼