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NON-VOLATILE SINGLE-EVENT UPSET TOLERANT LATCH CIRCUIT

机译:非易失性单粒子翻转容错锁存电路

摘要

In accordance with a preferred embodiment of the present invention, a non- volatile single-event upset (SEU) tolerant latch is utilized to store device configurations. The non-volatile SEU tolerant latch includes a first and second inverters connected to each other in a cross-coupled manner. The gates of transistors within the first inverter are connected to the drains of transistors within the second inverter via a first feedback resistor. Similarly, the gates of transistors within the second inverter are connected to the drains of transistors within the first inverter via a second feedback resistor. The non-volatile SEU tolerant latch also includes a pair of chalcogenide memory elements connected to the inverters for storing information. All features and advantages of the present invention will become apparent in the following detailed written description.
机译:根据本发明的优选实施例,利用非易失性单事件翻转(SEU)容错锁存器来存储设备配置。非易失性SEU耐性锁存器包括以交叉耦合的方式彼此连接的第一和第二反相器。第一反相器内的晶体管的栅极经由第一反馈电阻器连接至第二反相器内的晶体管的漏极。类似地,第二反相器内的晶体管的栅极经由第二反馈电阻器连接至第一反相器内的晶体管的漏极。非易失性SEU容性锁存器还包括一对连接到反相器的硫族化物存储元件,用于存储信息。在以下详细的书面描述中,本发明的所有特征和优点将变得显而易见。

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