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NONVOLATILE MEMORY ELEMENT, PROCESS FOR PRODUCING THE NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE USING THE NONVOLATILE MEMORY ELEMENT
NONVOLATILE MEMORY ELEMENT, PROCESS FOR PRODUCING THE NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE USING THE NONVOLATILE MEMORY ELEMENT
This invention provides a nonvolatile memory element that can be operated at a high speed and, at the same time, has reversibly stable rewrite characteristics and good resistance retention characteristics, a process for producing the nonvolatile memory element, and a nonvolatile memory device using the nonvolatile memory element. The nonvolatile memory element comprises a first electrode layer (103), a second electrode layer (105), and a resistance change layer (104) which is interposed between the first electrode layer (103) and the second electrode layer(105) and undergoes a reversible change in resistance based on an electrical signal applied between the first electrode layer (103) and the second electrode layer (105). The resistance change layer (104) is constructed so that the resistance change layer (104) comprises a tantalum oxide containing at least a transition metal oxide different from tantalum and satisfies the requirement that the tantalum oxide containing the transition metal oxide different from tantalum is represented by TaxMyOz wherein 0 y/x 1 and 0.5 ≤ z/(x + y) ≤ 1.9.
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机译：本发明提供了一种可以高速操作并且同时具有可逆地稳定的重写特性和良好的电阻保持特性的非易失性存储元件，该非易失性存储元件的制造方法以及使用该非易失性存储器件的非易失性存储装置。记忆元件。非易失性存储元件包括第一电极层（103），第二电极层（105）和介于第一电极层（103）与第二电极层（105）之间并经过电阻变化层的电阻变化层（104）。基于施加在第一电极层（103）和第二电极层（105）之间的电信号，电阻的可逆变化。构造电阻变化层（104），使得电阻变化层（104）包括至少包含不同于钽的过渡金属氧化物的氧化钽，并且满足表示包含不同于钽的过渡金属氧化物的氧化钽的要求由TaxMyOz提供，其中0 ＜y / x ＜1且0.5≤z/（x + y）≤1.9。
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