Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides, oxides or oxynitrides

摘要

Novel metal-organic complex structure as shown in: wherein Ra is to be independently selected from dialkyl amide, difluoralkylamide, hydrogen, alkyl, alkoxy, fluoroalkoxy, fluoroalkyl, alicyclic group and aromatic radical or two adjustment doors apparent resistivity, which can be formed together, optionally contains nitrogen or oxygen; Every Rb is each independently selected from dialkyl amide, difluoralkylamide, hydrogen, alkyl, alkoxy, fluoroalkoxy, fluoroalkyl, alicyclic group and aryl; M is the element for the periodic table of elements that metal is selected from 4,5 or 6; X is at least 1 and when M group 4, and metal 2x+y are 4, when M is 5 groups of metals, y 2x +=5, and when M is in one 6 metal, y=2x+10 can be used for chemical gaseous phase and Atomic layer deposition method.