ATMOSPHERIC PRESSURE CHEMICAL VAPOUR DEPOSITION METHOD FOR PRODUCING A N-SEMICONDUCTIVE METAL SULPHIDE THIN LAYER

摘要

Metal sulphide thin layers are produced according to various known methods but not according to direct atmospheric pressure chemical vapour deposition (APCVD), wherein according to the knowledge of an expert, powdery reaction products are already formed in the gas phase, said products leading to a bad layer quality. APCVD is only used in prior art for producing Sn2S3 as metal sulphide thin layers. According to the claimed method, a precursor (PRln(g/fl)) containing indium, that has a high vapour pressure or forms a volatile adduct with a solvent, is transformed in a liquid or gaseous phase, is mixed with the inert carrier gas flow (IG) and the hydrogen sulphide (PRH2S(g)), that is fed in such an amount that the concentration thereof is equal to or less than 1 vol % in a mixed area (MP), and guided to the substrate (SU) that is heated to a temperature (T) that is equal to or between 100°C and 275°C. According to the claimed APCVD method, unexpectedly high-value indium layers can be produced simply and economically for example as buffer layers for solar cells.