METHOD FOR PRODUCING A DOPED III-N SOLID CRYSTAL AND A FREE-STANDING DOPED III-N SUBSTRATE, AND DOPED III-N SOLID CRYSTAL AND FREE-STANDING DOPED III-N SUBSTRATE

摘要

The invention describes methods for producing a doped III-N solid crystal, where III denotes at least one element of main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N solid crystal is deposited on a substrate or template in a reactor, and wherein at least one dopant is fed into the reactor in a mixture with at least one group III material. In this way, it is possible to obtain III-N solid crystals and III-N single-crystal substrates singulated therefrom, each having a highly homogeneous distribution of the dopant in the growth direction and also in the growth plane perpendicular thereto. It is correspondingly possible to provide a highly homogeneous distribution of charge carriers and/or of electrical resistivity in the growth direction and also in the growth plane perpendicular thereto. Furthermore, it is possible to obtain a very good crystal quality.