Erbium doping of III-N materials for near-IR optoelectronics.

摘要

In this dissertation, the potential for III-N:Er materials, epitaxially-grown in ultrahigh vacuum, as a basis for near-IR optoelectronic devices integrated with Si has been demonstrated. This research effort's scope includes the development and understanding of III-N matrix growth from chemical beams in ultrahigh vacuum, the demonstration and study of the incorporation and luminescence behavior of Er in III-N materials, and finally, the realization of electroluminescent GaN:Er structures emitting at 1.54 ;High quality, GaN and AlN films were grown epitaxially on (0001) Al