MEMORY ELEMENT UTILIZING MAGNETIZATION SWITCHING CAUSED BY SPIN ACCUMULATION AND SPIN RAM DEVICE USING THE MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a spin memory, wherein a voltage applied to a magneto-resistance effect element is small and the durability is superior.;SOLUTION: The spin memory has a ferromagnetic word line, a nonmagnetic bit line crossing the ferromagnetic word line, a wiring opposed to the ferromagnetic word line, and the magneto-resistance effect element 201 provided between an intersection part of the ferromagnetic word line and nonmagnetic bit line, and the wiring. In writing operation, a current is supplied to between the ferromagnetic word line and nonmagnetic bit line and then spins are accumulated in the nonmagnetic bit line from the ferromagnetic word line to invert the magnetization direction of a free layer of the magneto-resistance effect element. In reading operation, a current is supplied to between the nonmagnetic bit line and wiring and a current is supplied along the film thickness of the magneto-resistance effect element.;COPYRIGHT: (C)2009,JPO&INPIT