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A cryogenic spin-torque memory element with precessional magnetization dynamics

机译:具有进动磁化动力学的低温自旋扭矩存储元件

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摘要

We present a study of precessional magnetization switching in orthogonal spin-torque spin-valve devices at low temperatures. The samples consist of a spin-polarizing layer that is magnetized out-of-the film plane and an in-plane magnetized free and reference magnetic layer separated by non-magnetic metallic layers. We find coherent oscillations in the switching probability, characterized by high speed switching (~200 ps), error rates as low as 10−5 and decoherence effects at longer timescales (~1 ns). Our study, which is conducted over a wide range of parameter space (pulse amplitude and duration) with deep statistics, demonstrates that the switching dynamics are likely dominated by the action of the out-of-plane spin polarization, in contrast to in-plane spin-torque from the reference layer, as has been the case in most previous studies. Our results demonstrate that precessional spin-torque devices are well suited to a cryogenic environment, while at room temperature they have so far not exhibited coherent or reliable switching.
机译:我们提出了在低温下正交自旋转矩自旋阀装置中进动磁化转换的研究。样品由被膜外磁化的自旋极化层和被非磁性金属层隔开的面内磁化的自由和参考磁性层组成。我们发现切换概率具有相干振荡,其特征在于高速切换(〜200 ps),低至10 -5 的错误率以及较长时间范围(〜1 ns)的退相干效应。我们在广泛的参数空间(脉冲幅度和持续时间)范围内进行了深入的统计研究,结果表明,与面内自旋极化相比,面外自旋极化的作用可能主导着开关动力学。像大多数以前的研究一样,来自参考层的旋转扭矩。我们的结果表明,旋进式自旋转矩设备非常适合低温环境,而在室温下,迄今为止它们还没有表现出连贯或可靠的转换。

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