首页> 外国专利> THE ANTIMONY TELLURIDE THIN FILM AND SYNTHETIC SOLUTION WITH MODULATION OF NANO MULTILAYER AND NON-ISOTHERMAL HEAT TREATMENT

THE ANTIMONY TELLURIDE THIN FILM AND SYNTHETIC SOLUTION WITH MODULATION OF NANO MULTILAYER AND NON-ISOTHERMAL HEAT TREATMENT

机译:纳米多层膜调制和非等温热处理的锑化锑薄膜及合成溶液

摘要

A manufacturing method of antimony telluride compound synthesized through controlling nanoscale of tellurium atomic layer is provided to reduce or perform easily a high temperature uniform thermal treating process by obtaining a uniform combination state of component and one-way orientation crystal thin film. A manufacturing method of antimony telluride compound synthesized through controlling nanoscale of tellurium atomic layer comprise steps of: depositing a multi-layered thin film after adjusting a thickness of a specific element in a normal temperature state; depositing a multi-layered thin film after adjusting a thickness of a specific element at a stat of maintaining a specific temperature; and being cooled after being heated to a specific normal temperature over specific temperature and maintained at the specific temperature for fixed time.
机译:提供一种通过控制碲原子层的纳米级而合成的碲化锑化合物的制造方法,以通过获得组分和单向取向晶体薄膜的均匀结合状态来减少或容易地进行高温均匀热处理工艺。通过控制碲原子层的纳米级合成的碲化锑化合物的制造方法包括以下步骤:在常温状态下调节特定元素的厚度之后,沉积多层薄膜;在维持特定温度的状态下调节特定元素的厚度之后,沉积多层薄膜;在超过特定温度加热至特定常温并在特定温度下保持固定时间后冷却。

著录项

  • 公开/公告号KR20080111886A

    专利类型

  • 公开/公告日2008-12-24

    原文格式PDF

  • 申请/专利权人 IE SANG YUB;JEONG KWANG HO;

    申请/专利号KR20070060403

  • 发明设计人 JEONG KWANG HO;IE SANG YUB;

    申请日2007-06-20

  • 分类号C01B19/04;C01G30/00;

  • 国家 KR

  • 入库时间 2022-08-21 19:14:27

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