Low temperature process, a soluble polyimide resin and a mixed composition prepared by pre used as an insulating film for an organic thin film transistor element

摘要

A low-temperature soluble polyimide resin blend composition is provided to improve the overall characteristics of an organic thin film transistor, particularly field effect mobility, by using the composition as an interlayer dielectric having reduced surface tension. A polyimide resin blend composition for a gate dielectric film of an organic transistor comprises 1-99 wt% of a soluble polyimide resin represented by the following formula 1, and 1-99 wt% of a soluble polyimide resin represented by the following formula 2. In the formulae, the formula A is at least one tetravalent group essentially including a specific aliphatic cyclic tetravalent group; the formula B is at least one divalent group; l is a natural number of 1-300; the formula C is at least one divalent group essentially including a divalent aromatic group having a pendant alkyl group; and m is a natural number of 1-300.