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POLYMER FOR SPIN ON CARBON HARDMASK AND PREPARATION METHOD THEREOF, SPIN ON CARBON HARDMASK COMPOSITION CONTAINING THE POLYMER AND PATTERNING METHOD OF SEMICONDUCTOR DEVICE USING THE COMPOSITION
POLYMER FOR SPIN ON CARBON HARDMASK AND PREPARATION METHOD THEREOF, SPIN ON CARBON HARDMASK COMPOSITION CONTAINING THE POLYMER AND PATTERNING METHOD OF SEMICONDUCTOR DEVICE USING THE COMPOSITION
A spin-on hard mask condensation polymer, a spin-on carbon hard mask composition containing the condensation polymer, a method for forming the spin-on carbon hard mask by using the composition, and a method for forming a semiconductor device pattern are provided to absorb the reflected light generated during the exposure and to reduce processing time and cost. A spin-on hard mask condensation polymer is represented by the formula 1 and has a weight average molecular weight of 500-20,000, wherein R is a naphthalene derivative or an anthracene derivative; and n is 1-600. A spin-on carbon hard mask composition contains 0.1-40 wt% of the condensation polymer; and optionally a curing agent, a thermal acid generator and a solvent.
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