SPIN ON CARBON HARDMASK COMPOSITIONS WITH LOW EVAPORATION LOSS AND PATTERNING METHOD BY USING THE SAME

摘要

An object of the present invention is to provide a hardmask composition with a low evaporation loss useful in a semiconductor lithography process, and a spin-on hardmask composition comprising a polymer represented by Formula 1, a surfactant, and an organic solvent, and a pattern using the composition The method is configured as a component, and the hard mask according to the present invention has excellent heat resistance characteristics and has the effect of improving the yield by minimizing the loss of evaporation that may act as a defect during the process.