SPIN ON CARBON HARDMASK COMPOSITIONS WITH CHARACTERISTICS OF HIGH THICKNESS AND PATTERNING METHOD BY USING THE SAME

摘要

In order to provide a hardmask composition having a high thickness useful for a semiconductor lithography process, the present invention applies a spin-on hardmask composition and the composition to an upper portion of the layer to be etched through spin coating and a baking process to form a hardmask layer. A patterning method of forming is provided, and the hard mask according to the present invention has an effect of exhibiting a high thickness, high dental resistance tolerable in a multi etch process and excellent mechanical properties with excellent solubility characteristics.