ECHTER USING CAPACITANCE COUPLED PLASM

摘要

An etching apparatus using capacitively coupled plasma is provided to control uniformity of the plasma inside a reaction chamber by controlling electric field distribution inside the reaction chamber. A body(10) forms a reaction chamber(80) to generate plasma inside. A bottom electrode(60) is installed in the reaction chamber. An electric field distribution control unit(90) is installed in the ground electrode. A main body is composed of a plurality of ground electrodes(11,12) divided by an insulator. The bottom electrode receives high frequency power. The bottom electrode forms the electric field to generate the plasma in the reaction chamber. The electric field distribution control unit controls the electric field distribution of the reaction chamber.