An etching device using the plasma is provided to make the plasma uniform when pressure is low and improve the direct of the etching component and the reaction gas which is income into the semiconductor test sample. An etching device using the plasma includes a main body in which a lower part reaction chamber(22) and a top reaction chamber(21) is formed; an etching gas inlet port(200) providing the etching gas; an inductively coupled plasma source(70) which is provided to one side of the main body and makes the etching gas to the plasma; a grid electrode structure(100) including a plurality of loads which are separated from each other, and moves the plasma to the lower part reaction chamber from the top reaction chamber; a dissociation degree adjustment inlet for toxic gas(300) in which the dissociation degree adjustment gas is flowed.
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