METHOD FOR ANALYZING BULK METALLIC IMPURITIES IN BULK OF SILICON WAFER

摘要

A method for analyzing bulk metallic impurities in bulk of silicon wafer is provided to minimize the manual process and to reduce analysis error. The polycrystalline silicon layer is evaporated in the surface of the silicon wafer(S1). At this time, the evaporation is performed by the low pressure chemical vapor deposition. The polycrystalline silicon layer is etched by the vapor-phase etching(S2). The resultant silicon wafer is put for 2~10 minutes under the hydrofluoric vapor atmosphere. The silicon wafer is scanned by the mixture of hydrofluoric acid and hydrogen peroxide. The metal pollution level about the solution after being scanned is analyzed(S4).