METHOD FOR DEPOSITING AN ULTRA FINE GRAIN POLY SILICON THIN FILM, CAPABLE OF SECURING A DEVICE CHARACTERISTIC WITH DURABILITY AND RELIABILITY BY FORMING THE UNIFORM GRAIN

摘要

PURPOSE: A method for depositing an ultra fine grain poly silicon thin film is provided to improve uniformity of an electrical characteristic by depositing a poly silicon thin film by supplying the source gas with silicon based gas and oxygen based gas to a chamber loading the substrate.;CONSTITUTION: A thin film is deposited by supplying the source gas to a chamber loading a substrate. The source gas includes silicon-based gas and oxygen-based gas. An inlet(12) for inputting the source gas is formed in a chamber of a deposition device(10). The gas from the inlet is sprayed to the chamber through a shower head(13). A wafer(15) is arranged on a heater(14). The heater is supported by a heater support(16).;COPYRIGHT KIPO 2010