METHOD FOR FORMING AN ULTRA FINE GRAIN POLY SILICON THIN FILM WITH HIGH YIELD AND HIGH DEVICE CHARACTERISTIC

摘要

PURPOSE: A method for forming an ultra fine grain poly silicon thin film is provided to obtain uniform grains by mixing the gas containing oxygen with SiH4.;CONSTITUTION: A thin film is deposited by supplying the source gas to a chamber loading a substrate. The source gas includes the silicon-based gas, oxygen-based gas, and phosphorous-based gas. The mixing ratio of the silicon based gas and the oxygen based gas is 0.2 or less. An inlet(12) for inputting the source gas is formed in a chamber(11) of a deposition device(10). A shower head(13) sprays the gas to the chamber. A wafer(15) is positioned on a heater(14).;COPYRIGHT KIPO 2010