Nonvolatile semiconductor memory device having gate stack comprising OHAOxide-Hafnium oxide-Aluminium oxide film and method for manufacturing the same

摘要

Provided is a nonvolatile semiconductor memory device including a semiconductor substrate having a source region and a drain region separated by a predetermined distance, and a gate stack formed between the source region and the drain region on the substrate, one end of the gate stack contacting the source region and the other end of the gate stack contacting the drain region, wherein the gate stack includes: a tunneling film (42); a first trapping material film (44) doped with a predetermined first doping impurity having a higher dielectric constant than a nitride film (Si 3 N 4 ); a first insulating film (46) having a higher dielectric constant than a nitride film; and a gate electrode (48), all of which are deposited sequentially on a substrate. The first three films of the gate stack may comprise OHA (Oxide-Hafnium oxide-Aluminum oxide) materials. There is provided a nonvolatile semiconductor memory device capable of effectively controlling the trap density according to the doping concentration, thereby increasing the write/erase speed of data at a low operating voltage.