首页> 外国专利> EXPOSURE CONDITION SETTING METHOD, SUBSTRATE PROCESSING DEVICE, AND MEMORY MEDIA OF COMPUTER PROGRAM

EXPOSURE CONDITION SETTING METHOD, SUBSTRATE PROCESSING DEVICE, AND MEMORY MEDIA OF COMPUTER PROGRAM

机译:曝光条件设定方法,基板处理装置以及计算机程序的存储介质

摘要

The present invention is an exposure condition setting method, substrate processing apparatus, and relates to a computer program forming a resist film on the etched layer of the test substrate with an etched layer and the exposure amount and focus of the resist film a plurality of regions in a predetermined test pattern, changed by the value of each successively exposed and developed to form a resist pattern to be the plurality of portions. Next, the etched etching, and peeling the resist pattern determined by the shape of the etched film pattern of the plurality of portions on the scanner for interrogating methoxy-tree technique, the line width of the resist pattern and the exposure amount and a focus value for the sequential exposure etching pattern film based on the line width and provides a technique for determining the management range of the combination of the exposure amount and focus value allowed to obtain an etch pattern having a desired shape.
机译:本发明是一种曝光条件设定方法,基板处理设备,并且涉及一种计算机程序,该计算机程序在具有蚀刻层的测试基板的蚀刻层上形成抗蚀剂膜,并且该抗蚀剂膜的曝光量和焦点在多个区域在预定的测试图案中,按每个相继曝光和显影的值改变该值,以形成抗蚀剂图案成为多个部分。接下来,进行蚀刻,并剥去由用于询问甲氧基树技术的扫描仪上的多个部分的蚀刻膜图案的形状所确定的抗蚀剂图案,抗蚀剂图案的线宽以及曝光量和聚焦值。用于基于线宽的顺序曝光蚀刻图案膜的方法,并且提供一种用于确定允许获得具有期望形状的蚀刻图案的曝光量和聚焦值的组合的管理范围的技术。

著录项

  • 公开/公告号KR100887352B1

    专利类型

  • 公开/公告日2009-03-06

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20077011171

  • 申请日2007-05-16

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 19:12:08

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号