CVD-ED (Options) and a method for synthesizing heteroepitaxial films of silicon carbide on SILICON

摘要

1. CVD-reactor for the synthesis of heteroepitaxial silicon carbide films on silicon, which is realized the possibility of holding the film deposition process under reduced pressure, and having a resistive heaters or induction heating type, characterized in that the hydrogen is at a temperature comparable to the temperature of the heater enters the synthesis zone normal to the silicon substrate, and source of the film components parallel to the substrate. ! 2. CVD-reactor according to claim 1, characterized in that the heaters are made of tantalum. ! 3. CVD-reactor according to claim 1, characterized in that the sections of the heating elements are arranged circumferentially around the central tokovoda performing simultaneously the role of a channel for removing chemicals. ! 4. CVD-reactor according to claim 1, wherein that the sections of the heating elements and the substrate are in different parallel planes in the following order: substrate heater, the substrate holder-substrate, a heating ... -nagrevatel. ! 5. A method of synthesis of heteroepitaxial silicon carbide films on silicon by chemical vapor deposition at a pressure of from 5 x 102 to 5 x 10-2 Pa, comprising feeding to the zone of synthesis and hydrogen components of the film source, defined in this zone, at least , two silicon substrates at a temperature of from 800 to 1380 ° C, characterized in that the active hydrogen is used in the synthesis. ! 6. A method according to claim 5, characterized in that during the synthesis of silicon carbide films using an active hydrogen, wherein the hydrogen temperature is higher than the substrate temperature and source of the film components, at least 100 ° C.