METHOD OF LASER ANNEALING SILICON SUBSTRATE, CONTAINING IMPLANTED LAYERS

摘要

FIELD: physics.;SUBSTANCE: invention relates to complete activation of donors and acceptors under the condition for complete elimination of residual defects. A silicon substrate is laser annealed, where the silicon substrate contains amorphous layers of thickness 100 nm implanted with impurities in a hydrogen plasma medium at temperature of the silicon substrate of 600 K, or 640 K, or 645 K, or 650 K, or 655 K.;EFFECT: reduced formation of point defects in silicon substrates.;5 ex