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A method of manufacturing a semiconductor device with a high - k - gate - dielectric layer and a metal - gate electrode
A method of manufacturing a semiconductor device with a high - k - gate - dielectric layer and a metal - gate electrode
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机译:具有高k栅介质层和金属栅电极的半导体器件的制造方法。
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摘要
A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, forming a trench within the dielectric layer, and forming a high-k gate dielectric layer within the trench. After forming a first metal layer on the high-k gate dielectric layer, a second metal layer is formed on the first metal layer. At least part of the second metal layer is removed from above the dielectric layer using a polishing step, and additional material is removed from above the dielectric layer using an etch step.
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