Thyristor with improved activation performance, thyristor arrangement with a thyristor, a process for the manufacture of a thyristor and a thyristor arrangement

摘要

Thyristor withi) a semiconductor body (1), in which in a vertical direction (v), starting from a rear side (14) towards a front side (13), a p - doped emitter (8), a n - doped base (7), a p - doped base (6) and an n - doped the main emitter (5) are arranged successively;ii) a firing stages structure (ag1, ag2, ag3, and ag4) with at least one ignition stages emitter (51, 52, 53, 54); andiii) a metallization layer (4a, 4b), the at least a first section (45), thea) between two adjacent firing stages (ag1, ag2, ag3, and ag4) or between the of the main cathode (hk) nearest detonator stage (ag4) and the main cathode (hk) on the front side (13) and arranged with respect to the semiconductor body (1) is electrically insulated;b) above a first, at least in some sections (64) of the p - doped base (6) is disposed, in which the electrical conductivity of the p - doped base (6) and / or the thickness of the p - doped base (6) with respect to sections (63, 65) of the p - doped base (6), which in..