首页> 外国专利> Thyristor arrangement with a firing stages thyristor, wherein the rate of current is limited and method for the operation of the thyristor arrangement

Thyristor arrangement with a firing stages thyristor, wherein the rate of current is limited and method for the operation of the thyristor arrangement

机译:具有触发级晶闸管的晶闸管装置,其中电流的速率受到限制,并且该晶闸管装置的操作方法

摘要

Thyristor arrangement with– a semiconductor body (1), in which in a vertical direction (v) between a rear face (14) and a front side (13), a p - doped emitter (8), a n - doped base (7), a p - doped base (6) and an n - doped the main emitter (5) are arranged following each other;– an ignition area (zb);– a first detonator stage (ag1), which is a n - doped first ignition stages emitter (51), and which, in a to the vertical direction (v) vertical lateral direction (r) between the ignition area (zb) and the main emitter (5) is arranged;– a second detonator stage (ag2), which is a n - doped second ignition stages emitter (52), and the in the lateral direction (r) on the the ignition area (zb) side facing away from the first detonator stage (ag1) between the first detonator stage (ag1) and the main emitter (5) is arranged;– a first section (101) of the semiconductor body (1);– a second portion (102) of the semiconductor body (1);– a first electrical coupling element..
机译:晶闸管装置具有-半导体本体(1),其中在垂直方向(v)上在背面(14)和正面(13)之间,p掺杂发射极(8)和a掺杂基极(7) ,p掺杂的基极(6)和n掺杂的主发射极(5)依次排列;-点火区(zb);-第一雷管级(ag1),是-掺杂的第一点火级发射器(51),并在点火区域(zb)和主发射器(5)之间沿垂直方向(v)的垂直横向(r)布置; –第二雷管级(ag2), -掺杂第二点火级发射极(52),并且在横向方向(r)上在第一雷管级(ag1)和第二雷管级之间的背向第一雷管级(ag1)的点火区域(zb)侧。布置主发射器(5);-半导体本体(1)的第一部分(101);-半导体本体(1)的第二部分(102);-第一电耦合元件。

著录项

  • 公开/公告号DE102008051403B4

    专利类型

  • 公开/公告日2010-12-16

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20081051403

  • 发明设计人

    申请日2008-10-11

  • 分类号H01L29/74;H01L21/332;H01L27/06;

  • 国家 DE

  • 入库时间 2022-08-21 17:47:59

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