Integrated circuit has multiple resistance change memory cells, where each memory cell has top electrode, bottom electrode and resistance changing material provided between top electrode and bottom electrode

摘要

The integrated circuit (200) has multiple resistance change memory cells. Each memory cell has a top electrode, a bottom electrode (103) and a resistance changing material. The resistance changing material is provided between the top electrode and the bottom electrode. The top electrode entirely forms a common continuous primary electrode (105), or the common continuous primary electrode is provided above the top electrode. The primary electrode is electrically connected with all top electrodes. Independent claims are included for the following: (1) a memory cell array; (2) a memory cell; (3) a method for operating an integrated circuit; and (4) a method for manufacturing an integrated circuit.