Phase changeable memory cell includes top electrode whose tip extends towards vertical portion of bottom electrode, and phase changeable memory layer pattern between top and bottom electrodes

摘要

A phase changeable material layer pattern (64g) is pinched between top and bottom electrodes (66e,56e) on a substrate. The tip (T) of the top electrode, extends towards the vertical portion (56v) of the bottom electrode. An independent claim is also included for method of fabricating phase changeable memory cell.