首页> 外国专利> Monolithically integrated photodetector array device with ROIC for laser radar image signal and method of making the same

Monolithically integrated photodetector array device with ROIC for laser radar image signal and method of making the same

机译:具有ROIC的用于激光雷达图像信号的单片集成光电探测器阵列装置及其制造方法

摘要

A monolithically integrated, integrated read-out circuit (ROIC) integrated photodetector array device for a laser radar image signal and a method of fabricating the same are provided. The photodetector array IC for a laser radar image signal comprises: a plurality of photodetection pixels each having a photodiode for converting the energy of incident light into electrical energy and a first heterojunction bipolar transistor for selecting the electric power of the photodiode in the photodiode Line of the photodiode array and a second heterojunction bipolar transistor for selecting the output of the electrical signals that are transmitted from the photodetector in the column of the photodiode array includes, and metal interconnecting lines, for the electrical connection between an n-electrode the photodiode and an emitter electrode of the first heterojunction bipolar transistor and between a collector electrode of the first heterojunction bipolar transistor and an emitter electrode of the second heterojunction bipolar transistor are provided, the photodiode, the first heterojunction bipolar transistor u and the second heterojunction bipolar transistor is integrated as a monolithic chip on a semi-insulating InP substrate wafer. Accordingly, it is possible to simplify manufacturing processes, substantially increase the yield, and perform the ULSI (Ultra Large Scale Integration).
机译:提供了一种用于激光雷达图像信号的单片集成,集成读出电路(ROIC)集成光电探测器阵列装置及其制造方法。用于激光雷达图像信号的光电检测器阵列IC包括:多个光电检测像素,每个光电检测像素均具有用于将入射光的能量转换为电能的光电二极管,以及用于选择光电二极管线路中的光电二极管的电功率的第一异质结双极晶体管。光电二极管阵列和用于选择从光电二极管阵列的列中的光电检测器传输的电信号的输出的第二异质结双极晶体管,包括金属互连线,用于在光电二极管的n电极和n电极之间进行电连接。提供第一异质结双极晶体管的发射极并在第一异质结双极晶体管的集电极与第二异质结双极晶体管的发射极之间,将光电二极管,第一异质结双极晶体管u和第二异质结双极晶体管集成为一体。在半绝缘InP基板晶圆上的单片芯片。因此,可以简化制造工艺,显着提高产量,并执行ULSI(超大规模集成)。

著录项

  • 公开/公告号DE102008002231A1

    专利类型

  • 公开/公告日2009-06-25

    原文格式PDF

  • 申请/专利号DE20081002231

  • 发明设计人

    申请日2008-06-05

  • 分类号H01L27/146;G01S7/481;H04N5/30;

  • 国家 DE

  • 入库时间 2022-08-21 19:09:20

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