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A Monolithically Integrated Laser-Photodetector Chip for On-Chip Photonic and Microwave Signal Generation

机译:用于片上光子和微波信号生成的单片集成激光光电探测器芯片

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摘要

An Indium-phosphide-based monolithically integrated photonic chip comprising of an amplified feedback laser (AFL) and a photodetector was designed and fabricated for on-chip photonic and microwave generation. Various waveforms including single tone, multi-tone, and chaotic signal generation were demonstrated by simply adjusting the injection currents applied to the controlling electrodes. The evolution dynamics of the photonic chip was characterized. Photonic microwave with frequency separation tunable from 26.3 GHz to 34 GHz, chaotic signal with standard bandwidth of 12 GHz were obtained. An optoelectronic oscillator (OEO) based on the integrated photonic chip was demonstrated without using any external electrical filter and photodetector. Tunable microwave outputs ranging from 25.5 to 26.4 GHz with single sideband (SSB) phase noise less than ?90 dBc/Hz at a 10-kHz offset from the carrier frequency were realized.
机译:设计并制造了基于磷化铟的单片集成光子芯片,该芯片由放大的反馈激光(AFL)和光检测器组成,用于在芯片上产生光子和微波。通过简单地调节施加到控制电极的注入电流,可以演示包括单音,多音和混沌信号生成在内的各种波形。表征了光子芯片的演化动力学。获得了可从26.3 GHz调谐到34 GHz的频率间隔可调的光子微波,标准带宽为12 GHz的混沌信号。演示了基于集成光子芯片的光电振荡器(OEO),无需使用任何外部电滤波器和光电检测器。实现了在25.5至26.4 GHz范围内可调的微波输出,并且在距载波频率偏移10 kHz的情况下,单边带(SSB)相位噪声小于90 dBc / Hz。

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