Process for producing monocrystalline n-silicon solar cells and solar cell, produced by such a process

摘要

The invention relates to a method for producing monocrystalline n-silicon solar cells with backside, passivated p + emitter and back, spatially separated, near-surface highly doped n ++ - base regions and an inter-digital back contact finger structure, each in conductive connection with the p + emitter regions and n ++ Base areas. According to the invention, an aluminum or aluminum-containing thin film is deposited on the back side of the n-type silicon wafer and then a structuring of the thin film is carried out with the receipt of openings in the area of the later base contacts. In a further process step, the aluminum is then diffused into the n-silicon wafer to form a structured emitter layer.