Crossings of isolation trenches of the soi - technology

摘要

The present invention relates to the geometric configuration (layout) of crossing points and mouths of isolation trenches (trench) with a high aspect ratio for trench isolated smart power technologies with thicknesses (about 50 μm thick) active layers in soi - silicon wafers. By means of the geometric configuration (layout) of the isolation trenches, the manufacturing process is simplified. The number of production steps required is reduced. Error rate and the manufacturing costs are reduced.