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Poly silicon evaluation method. Poly silicon inspection in front of the direction and production of a thin film transistor

机译:多晶硅评估方法。多晶硅检查的方向和薄膜晶体管的生产

摘要

The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.
机译:将评估通过准分子激光退火非晶硅膜形成的多晶硅膜的状态。当对非晶硅膜进行退火以形成多晶硅膜时,根据退火期间施加于非晶硅的能量,线性或周期性出现在所形成的多晶硅膜的膜表面的空间结构中。该线性或周期性被处理为图像,并通过利用线性或周期性从图像中以数字表示。基于数值结果检查多晶硅膜的状态。

著录项

  • 公开/公告号DE60133057T2

    专利类型

  • 公开/公告日2009-02-26

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE2001633057T

  • 发明设计人

    申请日2001-01-03

  • 分类号H01L21/66;

  • 国家 DE

  • 入库时间 2022-08-21 19:08:26

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